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| Multiport MicroCapacitance (MC) SIDACtor(R) Device RoHS 1 (R1) 2 (G1) 6 (T2) 5 (G2) The multiport MC line protector is an integrated, multichip solution used for protecting multiple twisted pair from overvoltage conditions. It is intended for applications sensitive to load values. Typically, high speed connections require lower capacitance. CO values for the MC devices are 40% lower than standard UC devices. SIDACtor Devices This six-pin surface mount SOIC is equivalent to four discrete DO-214AA, which makes it ideal for densely populated, high-speed line cards that cannot tolerate PCB 3 4 inefficiencies nor the use of series power resistors. Surge current ratings up to 500 A (T1) (R2) are available. SIDACtor devices enable equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68). Electrical Parameters Part Number * P0084UCMCL P0304UCMCL P0644UCMCL P0724UCMCL P0904UCMCL P1104UCMCL P1304UCMCL P1504UCMCL P1804UCMCL P2304UCMCL P2604UCMCL P3104UCMCL P3504UCMCL VDRM Volts 6 25 58 65 75 90 120 140 170 190 220 275 320 VS Volts 25 40 77 88 98 130 160 180 220 260 300 350 400 VDRM Volts 12 50 116 130 150 180 240 280 340 380 440 550 640 VS Volts 50 80 154 176 196 260 320 360 440 520 600 700 800 VT Volts 4 4 4 4 4 4 4 4 4 4 4 4 4 IDRM Amps 5 5 5 5 5 5 5 5 5 5 5 5 5 IS mAmps 800 800 800 800 800 800 800 800 800 800 800 800 800 IT Amps 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 IH mAmps 50 50 150 150 150 150 150 150 150 150 150 150 150 Pins 1-2, 3-2, 4-5, 6-5 Pins 1-3, 4-6 * "L" in part number indicates RoHS compliance. For non-RoHS compliant device, delete "L" from part number. For surge ratings, see table below. General Notes: * All measurements are made at an ambient temperature of 25 C. IPP applies to -40 C through +85 C temperature range. * IPP is a repetitive surge rating and is guaranteed for the life of the product. * Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. * VDRM is measured at IDRM. * VS is measured at 100 V/s. * Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. Surge Ratings in Amps IPP Series 0.2x310 * 2x10 * 8x20 * 0.5x700 ** 2x10 ** 1.2x50 ** Amps C 50 Amps 500 Amps 400 10x160 * 10x160 ** Amps 200 10x560 * 10x560 ** Amps 150 5x320 * 9x720 ** Amps 200 10x360 * 10x1000 * 5x310 * ITSM 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz Amps 175 Amps 100 Amps 200 Amps 50 di/dt Amps/s 500 * Current waveform in s ** Voltage waveform in s Telecom Design Guide * (c) 2006 Littelfuse 3 - 37 www.littelfuse.com Multiport MicroCapacitance (MC) SIDACtor(R) Device Thermal Considerations Package Modified MS-013 6 5 4 1 2 3 Symbol TJ TS RJA Parameter Operating Junction Temperature Range Storage Temperature Range Thermal Resistance: Junction to Ambient63 Value -40 to +150 -65 to +150 60 Unit C C C/W Capacitance Values pF Pin 1-2 / 3-2 (4-5 / 6-5) Tip-Ground, Ring-Ground Part Number P0084UCMCL P0304UCMCL P0644UCMCL P0724UCMCL P0904UCMCL P1104UCMCL P1304UCMCL P1504UCMCL P1804UCMCL P2304UCMCL P2604UCMCL P3104UCMCL P3504UCMCL MIN 35 25 55 50 45 45 40 35 35 30 30 30 25 MAX 75 45 85 75 70 70 60 55 50 50 45 45 40 MIN 20 10 30 25 25 25 20 20 15 15 15 15 15 pF Pin 1-3 (4-6) Tip-Ring MAX 45 25 50 45 40 40 35 35 30 30 30 25 25 Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias. www.littelfuse.com 3 - 38 (c) 2006 Littelfuse * Telecom Design Guide Multiport MicroCapacitance (MC) SIDACtor(R) Device +I IPP - Peak Pulse Current - %IPP tr = rise time to peak value td = decay time to half value IT IS IH IDRM -V VT VDRM VS +V 100 Peak Value Waveform = tr x td 50 Half Value 0 0 tr td t - Time (s) -I V-I Characteristics tr x td Pulse Waveform Percent of VS Change - % 10 IH (TC = 25 C) 14 12 8 6 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160 IH 25 C 25 C Ratio of Case Temperature (TC) - C Junction Temperature (TJ) - C Normalized VS Change versus Junction Temperature Normalized DC Holding Current versus Case Temperature Telecom Design Guide * (c) 2006 Littelfuse 3 - 39 www.littelfuse.com SIDACtor Devices |
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